ABSTRACT
The quantum capacitance and photoluminescence (PL) spectroscopy were measured for several Hg1- x Cd x Te samples. A resonant defect level located at 45meV above the bottom of conduction band has been investigated from the capacitance spectroscopy measurement for p-type Hg0.79Cd0.21Te bulk material under different annealing conditions. This defect state results from the Oxygen-occupied mercury vacancies. A deep donor state level due to the As-occupied mercury vacancies, which is located at about 8.5 meV below the conduction band, has been observed from the PL spectroscopy from 5K to 100K for a series of Arsenic implanted MBE-grown Hg0.61Cd0.39Te samples. Furthermore two acceptor levels, which are located at about 14.5meV and 31.5meV above the valance band, respectively, have been also found from the PL measurements. They can be assigned as the mercury vacancies and As-occupied Tellurium-site, respectively.
