ABSTRACT
The current status of GaSb-based semiconductor lasers emitting at ~4 μm is described. Double-heterostructure (DH) InAsSb/AlAsSb diode lasers have exhibited pulsed operation up to 170 K and the characteristic temperature is 20 K. Broad-stripe devices have operated cw up to 105 K, with single-ended cw power of 30 mW at 70 K. Quantum-well diode lasers consisting of a strained InAsSb/InAlAsSb active region have operated pulsed up to 165 K, with a characteristic temperature of 30 K up to 120 K. Broad-stripe devices have operated cw up to 123 K, with cw power at 80 K of 30 mW/facet. Ridge-waveguide lasers have operated cw up to 128 K and the cw threshold current at 80 K is 35 mA. Optical pumping of InAsSb/AlAsSb DH lasers using 0.94-μm InGaAs/AlGaAs diode arrays have exhibited peak power of 2 W and average power of 0.24 W at 92 K.
