ABSTRACT
This paper presents a quantitative calculation for the variations of the melt point and the mole fraction of the growth solution caused by the imbalance in the Hg pressure. The effect of Hg vapor pressure on the composition profile along the depth is also determined and compared with the experimental data. The results show that the non-equilibrium Hg pressure over the solution will result in changes of the average composition and the composition profile of the grown epitaxial film. Adequate Hg loss during the growth period can reduce the composition variation from the epilayer/substrate interface to film surface.
