Measurement of surface recombination velocity in HgCdTe by using Photoconductive decay method

This paper reports a method of measuring the surface recombination velocity by the photoconductive decay method. The surface recombination velocity measurements on n-type Hg₁__xCd_xTe specimen for composition between 0.21 and 0.25 have been carried out with three different pulse width of applied light. The values for the surface recombination velocity are obtained by fitting the curves to the one dimensional transport equation for chemically etched samples and KOH passivated samples.