ABSTRACT
We have prepared InAsSb/InGaAs strained-layer superlattices (SLS's) using metal-organic chemical vapor deposition (MOCVD). X-ray diffraction was used to determine lattice matching as well as composition and structure of the SLS's. The presence of an InGaAsSb interface layer was indicated by broadened x-ray diffraction peaks for samples grown under non-optimized conditions. Two types of interfacial layers apparently due to a difference in composition at the interfaces. were observed with transmission electron microscopy (TEM). The width of the x-ray peaks can be explained by a variation of the interfacial layer thicknesses. Optimized growth resulted in SLS's with narrow x-ray peaks.
