ABSTRACT

Oxide desorption from InSb(l00) substrates is studied using RHEED, XPS, AES and SEM. We observe a multi-stage desorption process for surfaces prepared using either of two common chemical etchants. A composite oxide containing In2O3 and Sb2O5 is evident in as-loaded substrates. During the first stage, most of the Sb oxide is reduced, leaving behind a thin oxide layer consisting predominantly of In2O3. As Tsub is raised further in the presence of an Sb flux, desorption of In2O3 is evident. SEM images of substrates removed from the MBE chamber at various times during the desorption process indicate that In droplets condense on the surface before a smooth morphology ensues. We suggest that In reduced from In2O3 form droplets which then react with the supplied Sb flux to form InSb. Annealing at this temperature eventually produces a smooth, stoichiometric surface which results in a welldefined, Sb-stabilized pseudo-(lX3) RHEED pattern. InSb films grown on such substrates exhibit good structural and electrical properties.