ABSTRACT
InAs/GaSb superlattices with InAs layer thicknesses ranging from 4 to 14 monolayers (MLs) and 10 ML thick GaSb layers have been studied. They were grown with either InSb-like or GaAs-like interfaces (IF's) applying monolayer molecular beam epitaxy for the growth of the IF's. Detailed sample characterization was carried out using Fourier transform infrared photoluminescence spectroscopy, photocurrent spectroscopy, Raman scattering, and high resolution X-ray diffraction space mapping.
