ABSTRACT
Large area deposition of InSb on GaAs using Melalorganic Vapor Phase Epitaxy (MOVPE) has been developed by adapting an existing process to a multiwafer reactor. The batch size has been increased to eight 3" wafers which can be processed in the cycle time of 4 hours for the growth of a 2μm thick layer. The process was optimized to produce layers with a standard deviation of ±1.4% for thickness uniformity and sheet resistivity uniformity. These data are crucial for the production of the magnetic field sensors which use these layers.
