ABSTRACT
We present the properties of HgCdTe grown on CdZnTe and Si substrates. HgCdTe layers grown on CdZnTe substrates by MBE exhibit excellent Hall characteristics down to doping levels of 2x1015 cm-3. Electron mobilities ranging from (2-3)x105 cm2/vs at 23K were obtained. Measured lifetime data fits very well with the intrinsic band-to-band recombination. However, below a 2x1015 cm-3 doping level, minority carrier lifetime is limited by Schockley Reed recombination. Single domain, twin free CdTe(111)B epitaxial layers on Si substrates are currently routinely grown by MBE with an x -ray DCRC FWHM as low as 96 arc sec. The electrical characteristics and dislocation density of HgCdTe grown by MBE on (111)B CdTe/(100)Si are comparable to those grown on bulk (111)B CdTe. HgCdTe layers grown by LPE on CdTe/Si have EPD as low as 5.3x105 cm-2.
