ABSTRACT
We report on the epitaxial growth and the characterization of Hg1-xMgxTe on (001), (111)B and (211)B Cd0.96Zn0.04Te substrates by molecular beam epitaxy. The bandgap of this ternary compound is variable from -0.15 up to 3.49 eV at room temperature. Thin layers have good crystal quality and exhibit electron mobilities as high as 2 x 105 cm2V-1sec-1. The layers are stable for Mg concentrations up to 50 % and 70 % depending on substrate orientation. Also the measured band gap differs for (001) and (211)B substrates, which may be due to atomic ordering or phase separation.
