ABSTRACT
High-power midwave infrared HgCdTe/CdZnTe broad-stripe quantum well lasers were studied using 0.94-μm diode arrays for pumping. Laser power, threshold, and efficiency were studied for devices of various lengths and at different temperatures. At 88 K, a device yielded 1.3-W peak power and 105-mW average power per facet at 3.2 μm. The highest operation temperature was 154 K. Possibility of compact devices with closed-cycle cryo-cooler is discussed.
