ABSTRACT
Well resolved emission lines characteristic of high purity material have been identified in the photoluminescence of epitaxial InAs at 1.4K. Exciton-polariton, neutral-acceptor-bound exciton (principal and two-hole), donor-acceptor pair band, and phonon assisted transitions are seen in InAs grown by metalorganic chemical vapour deposition on InAs substrates using tertiarybutylarsine and trimethylindium. InAs layers simultaneously grown on GaAs substrates for transport studies resulted in high Hall mobilities of up to 1.2x105cm2/Vs at 50K. These growths, resulting in perfectly specular surfaces, were obtained by a two step method consisting of a 100nm prelayer deposited at 400°C followed by the bulk layer at a higher growth temperature.
