ABSTRACT
Mid-wave infrared diode lasers based on GaInSb/InAs superlattice active layers have been demonstrated for the first time. The results follow significant improvements in the optical quality of these structures resulting from choices of group-V species and overpressures during growth by molecular beam epitaxy and use of an in situ anneal. Devices fabricated to date lase in the 3-4μm spectral range up to temperatures of approximately 150K, with typical 77K threshold current densities of 130-400 A/cm2. The structures employ InAs/AlSb cladding layers and multi-quantum well active layers consisting of GaInSb/InAs superlattice wells and GaInAsSb barriers.
