ABSTRACT
InGaAs/GaAs Quantum Well Infrared Photodetectors (QWIP) are studied theoretically using a numerical modeling. It is shown that triangular emitter and collector barriers provide better transport conditions and higher QWIP performance as compared to rectangular barriers. The photoconductive gain differs considerably from the dark current gain, due to a redistribution of the potential in the QWIP under the influence of infrared radiation.
