ABSTRACT
This paper reports on both a novel lithographic process using nanochannel glass arrays and on the continued development of a dry etch process for narrow-gap semiconductors. Original and thin film replica nanochannel glass arrays have been used to pattern dot and/or anti-dot arrays on both HgTe/CdTe and InAs/GaSb heterostructures. Pattern transfer is achieved using reactive ion etching with methane/hydrogen/argon microwave plasmas generated under electron cyclotron resonance conditions. A desorption-limited, anisotropic etch process has been developed for both materials with exemplary etch rates of 200Å/min and 325Å/min for HgCdTe and InAs/GaSb, respectively. Features as small as 600 nm in diameter with nearly vertical sidewalls have been realized. Initial assessments on damage resulting from pattern transfer in both materials are also reported.
