ABSTRACT
Stimulated emission has been observed from InAs/AlAs0.16Sb0.84 doubleheterojunction and InAs/InAsxSb1-x type-II superlattice (SL) laser structures grown on InAs under cw and pulsed optical pumping. For the InAs/AlAs0.16Sb0.84 double heterojunction lasers, the operating wavelength is 3.0 μm at low temperatures. The maximum cw operating temperature is 95 K. For theIlnAs/InAsxS1- x type-II SL lasers, the maximum temperatures are 95 K for cw operation and 195 K for pulsed operation. At 90 K these lasers yield a peak power of 1.3 W/facet and an average power of 150 mW/facet at 3.4μpm. The longest operation wavelength achieved is 3.65 pm at 81 K.
