Defects and Electric Property Characterization of Multi-electrode Hg1-xCdxTe Hall Devices

For fabricating Hg_1-xCd_xTe detectors effectively, an understanding of the defect behavior in Hg_1-xCd_xTe materials and devices is important. A multielectrode Hg_1-xCd_xTe Hall device was specially prepared for investigating both material properties and detector performance, on which the synchrotron radiation Lane transmission topographs were taken for observation of lattice defects, the temperature dependent Hall effect, photoconductive decay and photocurrent spectra were measured for studying device. The results show that there exist many defects in the Hall device that include lattice strain, dislocation and substructure, etc.. These defects increase the concentration and decrease the carrier lifetime and cause abnormal photoconductive behavior, thus the detectivity of the Hall device as a detector is lowered.