ABSTRACT
A systematic study of homoepitaxial InSb films grown in a dedicated MBE system is reported. The films, grown on p-type substrates, have thicknesses up to 10 μm and are all found to be n-type. Electron cyclotron resonance at a wavelength of 119 μm is studied at temperatures from 4 K to 100 K. Depending on growth conditions, the carrier concentration and mobility are found to vaiy considerably. Impurity cyclotron resonance and conduction-band cyclotron resonance are resolved in the best films, where the carrier density is determined to be in the range of 1015 cm-3 and the mobility in excess of 100,000 cm2/Vsec. The observed cyclotron mass and high mobility indicate that the carriers are located in the bulk of the films and no evidence for surface-bound carriers is found. These conclusions from cyclotron resonance are corroborated by Hall effect measurements in the same films.
