Molecular Beam Epitaxy with Gaseous Sources: Growth and Applications of Mixed Group V Compounds and Selective-Area Growth

Molecular beam epitaxy (MBE) with gaseous sources has the advantages of growing mixed arsenide-phosphide compounds and selective-area growth by laser irradiation or on patterned substrates. We shall first describe the growth of strained InAs_xP_1-x/InP and strain-compensated InAS_xP_1-x/Ga_yIn_1-yP multiple quantum wells (MQWs) using elemental group III sources and thermally cracked arsine and phosphine and their electro-absorption properties for light modulation at 1.3 μm or beyond. We then report on the use of all gaseous sources for selective-area growth, doping, and composition modification by argon ion laser irradiation and for selective-area regrowth of a carbon-doped AlGaAs/GaAs external base for improving the performance of heterojunction bipolar transistors (HBTs).