ABSTRACT
The impact ionisation coefficients in (AlxGa1_x)0.52In0.48p have been determined from photomultiplication measurements on p-i-n structures. The results show that the electron and hole ionisation coefficients (α and β respectively) are much lower than in AlGaAs at similar electric fields, and decrease with increasing band-gap, giving rise to higher breakdown voltages. The α/β ratio is found to be close to unity across the composition range
