ABSTRACT
We have investigated a series of GaSb/InAs/GaSb single quantum well structures grown at several different temperatures with either 'InSb like' interfaces or 'GaAs-like' interfaces. During the growth, a minimum As overpressure was employed together with pause times of 30s. For all four samples grown at 400°C with 'GaAs-like' interfaces the 77K mobilities were as high as 95,000~115,000 cm2/Vs (4K mobilities -200,000 cm2/Vs ) indicating that As incorporation is not a problem at this growth temperature. These mobilities are even higher than those of samples with 'InSb-like' interfaces grown at the same temperature. The optimum growth temperature for 'InSb-like' interfaces appears to be 450°C and the 77K mobilities for these samples are no better than the mobilities found with samples grown at 400°C with 'GaAs-like' interfaces. We present a study of these samples using HRTEM with a view to understand the As-incorporation and their interfacial structures.
