ABSTRACT
In recent years, silicon carbide has received increased attention because of its potential for high power devices. 4H-SiC Schottky barrier diodes (1200 V) with forward current densities over 732 A/cm2 have been demonstrated. SiC UMOSFET's (1200 V) are projected to have 15 times the current density of Si IGBT's (1200 V). Sub-micron gate length 4H-SiC MESFET's have achieved f max = 30.5 GHz, f T = 14.0 GHz, and power density = 2.8 W/mm @ 1.8 GHz. 6H-SiC JFET's have achieved f max = 9.2 GHz, f T = 7.3 GHz, and 1.3 W/mm power density at 850 MHz.
