ABSTRACT
N+ and B+ implantations into α-SiC epilayers have been systematically investigated. Hot implantation is effective for the reduction of the sheet resistance of N+-implanted layers, especially in high-dose implantation. 6H-SiC pn diodes formed by N+ implantation showed a high blocking voltage of 410V at 623K. The reverse characteristics of SiC Schottky rectifiers were significantly improved by employing edge-termination which utilizes highly resistive layers formed by B+-implantation. Using this technique, 1.4kV Ti/4H-SiC Schottky rectifiers with extremely low power dissipation were realized.
