ABSTRACT
A GaAs MESFET technology for the fabrication of devices specially developed for continuous, reliable operation at high temperatures is presented. The technology is based on highly stable ohmic and Schottky contacts containing WSiN diffusion barriers and is optimized towards minimum temperature induced leakage currents across the substrate or along the semiconductor surface. MESFETs, fabricated by using this technology, have been optimized to match the requirements for continuous operation at high temperatures and have been successfully implemented in high temperature MMICs.
