ABSTRACT
Indium Phosphide based heterojunction bipolar transistors have demonstrated advantages over the more widely used GaAs-based HBT's. Recently there has been significant progress in device performance, scaling, reliability and applications of this technology. In this paper I will present a brief review of the device and process and its status to date, this includes a discussion of double heterojunction bipolar transistors for power applications. I will then present examples of key integrated circuit application areas including analog-to-digital converters and optoelectronic IC's. Finally, a brief discussion of reliability and technology qualification for system insertion is presented.
