ABSTRACT
Lateral compositional change of InAlAs on non-planer substrates with truncated ridges is demonstrated. In-rich InAlAs epitaxial layers are grown on top of ridges. It is found that In molar fraction in the In-rich regions increases as the epitaxial growth proceeds. This result indicates that self-formation of electron confining InAlAs wire structures can be fabricated. Also, the wires lattice-matched to the substrate are obtained by the control of In content of the grown layers.
