ABSTRACT
A novel GaAs BiFET technology based on AlGaAs/GaAs heterojunction bipolar transistor and GaAs junction gate floated electron channel field effect transistor (J-FECFET) has been developed. A single selective MOCVD growth is used to fabricate the BiFET structure. The whole process is almost the same as a typical HBT process except for the selective epitaxial growth. Transconductance of fabricated JFECFET with 1x200μm2 gate is 102mS/mm with fT and fMAXof 10.7 and 27.3 GHz, respectively. DC current gain of HBT is 21 at collector current density of 50KA/cm2 with emitter area of 3 x 2μm2. The simple process and superior performances of the new BiFET structure could be applicable to various multifunction MMICs.
