ABSTRACT
We describe an enhanced GaAs MESFET model which is physics-based and unified, covering all regimes of operation for a wide range of temperatures. Among the effects included are velocity saturation, drain induced barrier lowering, finite output conductance in the saturation region, bias dependent series resistances, bias dependent mobility, gate leakage, non-uniformities in the channel doping, frequency dependent output conductance, backgating and sidegating, and temperature dependent parameters. The output resistance and the transconductance are also accurately reproduced, making the model suitable for analog CAD. We implemented this model in SPICE and demonstrated excellent convergence, accuracy and speed.
