ABSTRACT
This paper reports on spatially non-uniform light emissions from a GaAs MESFET, undergoing parasitic oscillations. With oscillation, there was a 6-fold increase in emission intensity and a 300K rise in effective electron temperature. In addition, the distribution of emission intensity became spatially non-uniform, as did the electron temperature. The localized electron temperature rise and intensity increase show that the voltage between the drain and the gate was modulated by an electric field standing wave caused by oscillation, consequently a higher electric field accelerates impact ionization. An increase of a few volts of Vds would explain the temperature rise and intensity increase.
