ABSTRACT
We have developed WSi self-aligned gate (SAG) GaAs MESFET's with shallow channels fabricated by ion implantation through WSi films. By using an ion implantation through a 6-nm-thick gate metal thin film formed by DC sputtering, a shallow channel which is thinner by about 40 nm than the conventional process has been obtained. The 0.5- μ m-gate buried p-layer lightly doped drain (BP-LDD) SAGFET has exhibited K = 422 mS/Vmm, gmmax = 347 mS/mm and fmax = 95 GHz with Vth = -0.27 V. These excellent results suggest that this process is very suitable for fabricating low power dissipation GaAs-MMIC's.
