Novel high power GaAs MESFETs with low distortion and high gate-drain breakdown voltage

This paper presents a new approach to a power GaAs MESFET with a planar gate structure, using a MOCVD growth technique to form an undoped GaAs layer with good interface characteristics on an ion-implanted channel layer. The undoped GaAs layer made it possible to increase the gate-drain breakdown voltage, serving as both an ideal passivation layer and an ideal annealing cap of the ion implanted channel. This new simple structure is suitable for high performance power GaAs MESFETs.