ABSTRACT
A 3.3V GaAs monolithic driver amplifier was developed for Digital/Analog dualmode hand-held phones. The amplifier was fabricated using a selectively ion-implanted GaAs MESFET process with a gate length of 1μm. The amplifier displayed gain of 11~30dB and noise figure of 6.2~4.3dB at frequency range of 824~849MHz when drain bias is controlled from 0.7V to 2.5 V. 1dB compression point of output power was determined to be 8dBm, and the 2nd and 3rd harmonics were -23 and -32 dBc, respectively, at 8dBm output power. Two-tone (Δf=442.5kHz) third-order intermodulation at an output power of 2.5dBm was measured to be -30dBc Current consumption during power operation was 80mA at a maximum gain of 30dB. Performance of the amplifier is sufficient to be used as a driver amplifier for 3.3V operating Digital/Analog dual-mode hand-held phones.
