Hydrogenation effect in nitrogen doped ZnSe films grown by molecular beam epitaxy

Photoluminescence and micro-Raman measurements were carried out in order to investigate the hydrogenation effect on the behavior of donor-acceptor band emission and bound exciton for nitrogen doped ZnSe:N(N_a-N_d=3~8 x 10¹⁷ cm^-3) grown by molecular beam epitaxy. The luminescence due to recombination of the donor bound-exciton(I₂) appeared, due to the donor-acceptor pair transition shift to higher energy, and the acceptor bound-exciton(I₁) line intensity remarkably decreased after hydrogenation. When the hydrogenated samples were annealed rapidly, the acceptor bound exciton peak was increased, indicating hydrogen atoms were released from the materials. After hydrogenation, the intensity of the unscreened GaAs LO phonon is significantly decreased compared with the plasmon mode(L1). The increase of I(L1)/I(LO) is decrease probably due to the defects, which is free from the plasma damage. These results indicate that hydrogen atoms passivated not only nitrogen acceptors but also nitrogen related compensating defect complexes.