ABSTRACT
The whole shapes of the effective V-F characteristics in the submicron GaAs MESFETs are evaluated using the energy transport drift-diffusion model(ETDDM) including the nonstationary electron transport and the physical processes are studied. The drift velocity is described by a double-valued function of the drift electric field. This property is caused by the inertia motion of the F-valley electrons for small drain voltage and by the hot electron effect associated with the large energy relaxation time for large drain voltage. Thus the inertia term should not be neglected in the device simulation. It is confirmed that ETDDM using these effective V-F characteristics is effective.
