ABSTRACT
The effects of the sulfide treatment on the Al-P3N5/InP MIS Devices with a photo-CVD grown P3N5 insulating film are investigated. The minimum density of interface trap states is as low as 2.6 x 1010/cm2·eV, and has been obtained from the sulfide treated sample at 40 °C for 20min. We have successfully fabricated the depletion mode InP MISFETs for microwave power device applications. The effective channel electron mobility is observed to be 3100 cm2/V·s at 300K. The extrinsic transconductance of 5.8mS/mm shows a broad plateau region through the 4 V gate voltage swing. The InP MISFET with large gate voltage swing is attractive for power device applications.
