ABSTRACT
We show that a High Electron Mobility Transistor has a resonance response to an incoming electromagnetic radiation at the odd harmonics of the plasma wave frequency of the two dimensional electrons in the device channel (which are in a terahertz range for a 0.1 micron gate device). This response can be used for new types of detectors and mixers that use the plasma waves, which may propagate much faster than electrons. We show that the responsivities of this device may greatly exceed the responsivities of Schottky diodes currently used as detectors and mixers in a terahertz range.
