Photoelectric measurements of interband transitions in fully fabricated pseudomorphic high electron mobility transistors

We have performed photoelectric emission and conduction (PEC) studies on fully fabricated Al₀.₂₄Ga_0.76As/In_0.22Ga_0.78As pseudomotphic HEMTs and have observed interband transitions between quantum-confined states in the channel at room temperature. The separation between transition energies and the bias dependence of the photoconductivity spectra agree well with a simple model that assumes proportionality between the photocurrent and the interband absorption.