Al-free GaInP/InGaAs MODFETs on GaAs grown by OMVPE with fT > 100GHz

Excellent quality Ga_xIn_1-xP/In_yGa_1-yAs/GaAs MODFETs with a pseudomorphic barrier and a pseudomorphic channel were grown by OMVPE. This Al-free material system is the most promising material system for advanced MODFETs on GaAs. Record 2DEG carrier densities of 3.1-10¹²cm^-2 for single sided MODFET were measured. 0.1μm gate length MODFETs achieved for the first time f_T's over 105GHz and f_max's over 188GHz.