1.55 μm (GaIn)(AsP)-MQW-Laser Diodes Grown by Chemical Beam Epitaxy

(GaIn)(AsP)-heterostructures for 1.55 μm-MQW-laser diodes were grown by Chemical Beam Epitaxy. Laser properties compared favourably with state-of-the-art devices grown by MOCVD. Threshold current densities of 100 A/cm² per quantum well, internal quantum efficiencies of 0.7, internal losses of 15 - 20 cm^-1 and characteristic temperatures of 65 K were achieved with lattice -matched active layers. Devices with strained active layers showed reduced threshold currents of 80 A/cm² per quantum well, increased internal quantum efficiencies of 0.8 - 0.9 and reduced internal losses of 5 - 15 cm^-1. Convincing T_o-values as high as 90 K were observed. Using strain symmetrization allowed increasing the number of QWs to 10.