ABSTRACT
A novel resonant tunneling diode with single-peak I-V characteristics is proposed. This novel diode utilizes a new mechanism, i.e., coupling between the resonant tunneling effect in a vertical double barrier structure and the pinch-off effect in a lateral collector just beneath the structure. Using a one-dimensional distributed parameter model, the dependence of I-V characteristics on device parameters (emitter width and collector thickness) are investigated systematically and single-peak I-V characteristics are shown to be achieved for appropriate parameter values. The diodes are fabricated using the InGaAs/AlAs/InAlAs material system. The single-peak I-V characteristics are experimentally verified along with their dependence on the device parameters. Good agreement between the theoretical and experimental results confirms the proposed mechanism for the single-peak I-V characteristics. The proposed device could lead not only to reduced power consumption in functional logic circuits but also offer novel functional logic gates.
