ABSTRACT
Quantum Hall effect devices based on delta-doped Al0.25Ga0.75As/ In0.25Ga0.75As/GaAs pseudomorphic heterostructure materials grown by low-pressure metal organic chemical vapor deposition(LP-MOCVD) are sucessfully fabricated. A high electron mobility of 7200 cm2/Vs with a sheet carrier density of 2.0 X 1012cm-2 has been achieved at room temperature. The temperature coefficient of product sensitivity is -0.1%/K. The minimum detectable magnetic field(Bmin) of 3 μT at 1 Hz is achieved due to the high electron mobility.
