ABSTRACT
We have successfully grown various facets on the partially masked substrate by selective area epitaxy with chemical beam epitaxy (CBE) using unprecracked monoethylarsine. InGaAs selective growth mechanism was also examined on the GaAs(100) substrate patterned with various filling factors (the ratio of opening area to total area). The results show that the molecular reactants impinged on the mask are efficiently removed from the mask without gas phase diffusion or surface migration, thereby suppressing growth enhancement and compositional variation. We have also observed that the smooth (311), (377), and (1̄1̄1̄) facets change only to (311) facet with increasing growth temperature in [01̄1] direction of stripe mask. In case of [011] direction, however, (111) and (01̄1) facets further developed into (111) facet with increasing growth temperature. Facet formation mechanisms are discussed using dangling bond model and migration properties.
