ABSTRACT
We have investigated the electrical properties of a GaAs/AlGaAs-based mesoscopic ring structure in the presence of magnetic flux and electrostatic potential. In a certain range of the electrostatic potential, new h/e magnetoresistance oscillations have been observed at near zero magnetic field, where the new peaks of the oscillation are interspersed between the conventional ones. This phenomenon is attributed to the combined behavior of the magnetostatic and electrostatic Aharonov-Bohm effects simultaneously occuring in two different configurations of electron paths: one is the Mach-Zender type path and the other is a localization path which is composed of one turn of the ring.
