Polarization properties of GaAsP/AlGaAs tensilely strained quantum wire structures grown on V-grooved GaAs substrates

Crescent-shaped tensilely strained GaAs_{1- x} P _x /Al _y ,Ga_{1- y} As quantum wires (x = 0.11, y = 0.33) have been grown on 3-μm-period V-grooved GaAs substrates by low-pressure metalorganic vapor phase epitaxy and characterized by cross-sectional transmission electron microscope observation, low temperature cross-sectional photoluminescence and cathodoluminescence. A drastic polarization transition from TM to TE with decreasing quantum wire size has been found in cross-sectional polarized photoluminescence.