ABSTRACT
In the 780 nm near infrared spectral region, a fundamental transverse mode vertical cavity top surface emitting laser diode has been fabricated using single step MOCVD grown wafers. Deep proton implantation is employed to make a gain guided device. TEM00 mode is maintained up to 1.1 mW with a 5 μm diameter output window. We show that the transverse mode is influenced by implantation power because of the suppression of the thermal lens effect and the spatial hole burning. The threshold current is as low as 4 mA and the slope efficiency is 0.2 mW/mA. Moreover, a record low threshold voltage (1.72 V) is obtained by optimising current path structure.
