ABSTRACT
InGaAs vertical-cavity surface-emitting lasers buried in an amorphous GaAs (a-GaAs) layer have been studied to reduce surface recombination and to improve device characteristics. Threshold current and transverse mode characteristics are improved compared to air-post type devices. In particular, smaller devices than 25 μm diameter show more significant reduction of threshold currents. A stable single transverse mode emission for a 10 μm device is also observed. The results suggest that a-GaAs-buried structure is useful for both reducing surface recombination current and obtaining a single transverse mode emission.
