High-reflectivity AlAsSb/In(Ga1-xAlx)As distributed Bragg reflectors on InP substrates for 1.3 - 1.5 μm wavelengths

We demonstrate high-reflectivity semiconductor DBRs for 1.3-1.5 μm wavelengths. The AlAsSb/In(Ga_1-xAl_x)As stacks lattice-matched to InP were grown by molecular beam epitaxy. We determined the refractive indices of the two constituents by reflectance measurement and found that this material system has large refractive index differences of 0.4 at 1.3 μm and of 0.45 at 1.55 μm. The ten-pair AlAsSb/In(Ga_1-xAl_x)As DBRs achieved high reflectivities of 90% in the 1.3 μm wavelength range and of 93% in the 1.5 μm range.