ABSTRACT
A laser diode array structure consisting of a 150Å Al0.07Ga0.93As single quantum well active region operating near 810nm, cladded with an AlGaAs graded-index separate confinement heterostructure, has been grown by MOCVD. 3.1W output power has been obtained from the 500μm aperture, uncoated laser diode array with 460μm cavity length. The internal quantum effciency was found to be 75.8% and the internal loss 4.83cm -1.
