ABSTRACT
Ultralow threshold current characteristics of InGaAs-GaAs-InGaP buried heterostructure (BH) strained quantum well (QW) distributed feedback (DFB) and distributed Bragg reflector (DBR) lasers are reported. Uncoated InGaP DFB lasers show an ultralow CW threshold current of 2.2 mA measured at RT (which is the lowest threshold current ever obtained from DFB lasers), the slope efficiency of 0.36 mW/mA per facet, the sidemode suppression ratio (SMSR) of 30 dB, and the lasing wavelength at 0.98 μm. Also, InGaP DBR lasers show a CW RT threshold current of 7.2 mA with the SMSR of 25 dB and the Bragg wavelength at 0.96 μm.
