ABSTRACT
A serpentine shaped laser diode which has 10 dry etched mirrors and 2 claeved facets is fabricated. Reactive ion beam etching technique with CCl2F2 gas is applied to fabricate the total internal reflection mirror. This laser has a stripe width of 10μm and a cavity length of 960μm. This laser is oscillated under pulsed conditions with a threshold current of 210mA. Up to 20mW of optical power can be obtained from the two facets of the serpentine shaped laser. Total internal reflection mirror loss is evaluated from measurement of the threshold current density for different cavity lengths. The loss of the total internal reflection mirror is about 0.77dB per reflection.
